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| BUH515D HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR s s s s SGS-THOMSON PREFERRED SALESTYPE HIGH VOLTAGE CAPABILITY U.L. RECOGNISED ISOWATT218 PACKAGE (U.L. FILE # E81734 (N)) NPN TRANSISTOR WITH INTEGRATED FREEWHEELING DIODE 3 2 1 APPLICATIONS: s HORIZONTAL DEFLECTION FOR COLOUR TV DESCRIPTION The BUH515D is manufactured using Multiepitaxial Mesa technology for cost-effective high performance and uses a Hollow Emitter structure to enhance switching speeds. The BUH series is designed for use in horizontal deflection circuits in televisions and monitors. ISOWATT218 INTERNAL SCHEMATIC DIAGRAM R Typ. = 12 ABSOLUTE MAXIMUM RATINGS Symbol V CBO V CEO V EBO IC I CM IB I BM P t ot T stg Tj June 1997 Parameter Collector-Base Voltage (IE = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current (tp < 5 ms) Base Current Base Peak Current (t p < 5 ms) Total Dissipation at T c = 25 C St orage Temperature Max. Operating Junction Temperature o Value 1500 700 5 8 15 5 8 50 -65 to 150 150 Uni t V V V A A A A W o o C C 1/7 BUH515D THERMAL DATA R t hj-ca se Thermal Resistance Junction-case Max 2.5 o C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symb ol I CES Parameter Collector Cut-off Current (V BE = 0) Emitter Cut-off Current (I C = 0) Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage DC Current G ain RESISTIVE LO AD Storage Time Fall T ime INDUCTIVE LOAD Storage Time Fall T ime Test Cond ition s V CE = 1300 V V CE = 1500 V V CE = 1500 V V EB = 5 V IC = 5 A IC = 5 A IC = 5 A IC = 5 A IB = 1.25 A IB = 1.25 A VCE = 5 V VCE = 5 V 5 3 2.4 170 3.5 450 Min. Typ . Max. 10 0.2 2 200 1.5 1.3 10 Un it A mA mA mA V V Tj = 125 o C I EBO V CE(sat ) V BE(s at) h FE Tj = 100 C o ts tf ts tf V CC = 400 V I B1 = 1.5 A IC = 5 A I B1 = 1.25 A IC = 5 A I B2 = -2.5 A 3.6 260 s ns s ns f = 15625 Hz I B2 = -2.5 A 106 t V c eflybac k = 1050 sin 10 IF = 5 A V VF Diode Forward Voltage 2 V Pulsed: Pulse duration = 300 s, duty cycle 1.5 % Safe Operating Area Thermal Impedance 2/7 BUH515D Derating Curve DC Current Gain Collector Emitter Saturation Voltage Base Emitter Saturation Voltage Power Losses at 16 KHz Switching Time Inductive Load at 16KHz (see figure 2) 3/7 BUH515D Switching Time Resistive Load BASE DRIVE INFORMATION In order to saturate the power switch and reduce conduction losses, adequate direct base current IB1 has to be provided for the lowest gain hFE at 100 oC (line scan phase). On the other hand, negative base current IB2 must be provided to turn off the power transistor (retrace phase). Most of the dissipation, especially in the deflection application, occurs at switch-off. Therefore it is essential to determine the value of IB2 which minimizes power losses, fall time tf and, consequently, Tj. A new set of curves have been defined to give total power losses, ts and tf as a function of IB2 at 16 KHz frequencies for choosing the optimum negative drive. The test circuit is illustrated in fig. 1. Inductance L 1 serves to control the slope of the negative base current IB2 to recombine the excess carrier in the collector when base current is still present, this avoid any tailing phenomenon in the collector current. The values of L and C are calculated from the following equations: 1 1 L (IC)2 = C (VCEfly)2 2 2 1 = 2 f = L C Where IC= operating collector current, VCEfly= flyback voltage, f= frequency of oscillation during retrace. 4/7 BUH515D Figure 1: Inductive Load Switching Test Circuit Figure 2: Switching Waveforms in a Deflection Circuit 5/7 BUH515D ISOWATT218 MECHANICAL DATA DIM. MIN. A C D D1 E F G H L1 L2 L3 L4 L5 L6 M N U 5.35 3.3 2.9 1.88 0.75 1.05 10.8 15.8 20.8 19.1 22.8 40.5 4.85 20.25 3.5 2.1 4.6 mm TYP. MAX. 5.65 3.8 3.1 2.08 1 1.25 11.2 16.2 21.2 19.9 23.6 42.5 5.25 20.75 3.7 2.3 MIN. 0.210 0.130 0.114 0.074 0.029 0.041 0.425 0.622 0.818 0.752 0.897 1.594 0.190 0.797 0.137 0.082 0.181 inch TYP. MAX. 0.222 0.149 0.122 0.081 0.039 0.049 0.441 0.637 0.834 0.783 0.929 1.673 0.206 0.817 0.145 0.090 L3 N A E L2 L5 L6 F M U H 1 L1 L4 2 3 G D1 C D P025C 6/7 BUH515D Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. (c) 1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada- China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A . .. 7/7 |
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